M474B5273DH0-YK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module Seasonic

M474B5273DH0-YK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module SeasonicElevate your servers performance with Samsungs reliable 4GB DDR3 memory module, engineered for highdensity, lowvoltage environments. Designed for ECC unbuffered operation, this module delivers consistent, errorfree data integrity essential for missioncritical workloads. Its dualrank architecture ensures seamless multitasking and efficient memory bandwidth, while the 1. 35V lowvoltage design reduces power consumption and heat output, extending

or continuous server tasks

high‑availability setups

this drive provides the speed and reliability required for a smooth computing experience

providing a powerful upgrade without compromising space

and travelers who need reliable backup on the go

Built for reliability and future‑proofing

uninterrupted operation for both everyday tasks and demanding workloads

high‑speed storage in a compact 1‑inch form factor

consistent engagement across a wide range of gears

Experience unparalleled speed and reliability with our 36GB high‑performance hard drive

or reinforcing a remote site

enabling you to connect multiple peripherals such as printers